? 2003 ixys all rights reserved ixys reserves the right to change limits, conditions and dimensions. rectifier diode isoplus220 tm electrically isolated back surface features silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation low cathode to tab capacitance(15pf typical) international standard package epoxy meets ul 94v-0 c a c a isoplus 220 tm isolated back surface* symbol conditions maximum ratings i frms 60 a i fav t c = 95 c; 180 o sine (rms current limited) 30 a i fsm t vj = 45 c; t = 10 ms (50 hz), sine 200 a v r = 0 v; t = 8.3 ms (60 hz), sine 210 a t vj = 150 c; t = 10 ms (50 hz), sine 175 a v r = 0 v; t = 8.3 ms (60 hz), sine 185 a i 2 t t vj = 45 c; t = 10 ms (50 hz), sine 200 a 2 s v r = 0 v; t = 8.3 ms (60 hz), sine 185 a 2 s t vj = 150 c; t = 10 ms (50 hz), sine 155 a 2 s v r = 0 v; t = 8.3 ms (60 hz), sine 145 a 2 s t vj -55...+150 c t vjm 150 c t stg -55...+150 c t l 1.6 mm (0.062 in.) from case for 10 s 260 c v isol 50/60 hz rms; i isol 1 ma 2500 v~ f c mounting force 11...65 / 2.4...11 n / ib weight typical 2 g v rrm = 800 - 1200 v i f(av)m = 30 a dsi 30 v rsm v rrm type v v 900 800 dsi 30-08ac 1300 1200 dsi 30-12ac symbol conditions characteristic values typ. max. i r t vj = 25c; v r = v rrm 0.05 ma t vj = t vjm ;v r = v rrm 1.5 ma v f i f = 45 a; t vj = 25c 1.45 v v to for power loss calculations only 0.80 v r t t vj = t vjm 15 m ? r thjc 1.1 k/w r thch 0.6 k/w note: see dsi 30..a data sheet for electrical characteristic curves. ds98791a(07/03) preliminary data sheet isoplus220 outline (2 leads)
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